Abstract
The influences of crystal orientation on copper oxidation were investigated. The results indicated that crystal orientation of copper substrate has a great effect on the growth rate, the morphology of oxide film and the extent of oxidation failure. Shear test showed the adhesion strength between Cu(1 1 0) and its oxide film was the highest, whereas, the adhesion strength between Cu(3 1 1) and its oxide film was the lowest. SEM observations revealed that the oxide film grown on Cu(3 1 1) delaminated from substrate seriously, while the oxide film grown on Cu(1 0 0) and Cu(1 1 0) did not reveal such a phenomenon. Cu(1 0 0) and Cu(1 1 0) exhibited thinner oxide thickness compared to those on Cu(3 1 1) and Cu(1 1 1). The activation energy for oxide growth on Cu(1 0 0) and Cu(1 1 0) was calculated to be the highest while that on Cu(3 1 1) was the lowest.
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