Abstract
Janus transition-metal dichalcogenides (JTMDS) have attracted much attention due to their obvious potential for electronic and optical applications. The electronic transport properties of in-plane graphene/MoSSe heterojunctions are studied using density functional theory and nonequilibrium Green's function method. It is found that different contact patterns lead to different accumulation and depletion on the contact interface and exhibit a P-type Schottky barrier. Moreover, the Schottky barrier can be modulated by doping. The ohmic contact is formed when the doping concentration is 3 × 1013 cm−2, which is proved by the approximately linear characteristics of the current-voltage curve. These results would provide an insight into designing a high-performance device.
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