Abstract
Using the transient Sun–Voc measurements it has been demonstrated that not only ion migration but charge accumulation/recombination at perovskite/charge transporting layer interfaces also plays a significant role in the hysteresis of J-V curves in perovskite solar cells. The transient ideality factor was investigated for two different architectures of perovskite devices. The wide range variation of transient ideality-factor implies that different ionic distribution causes change in recombination mechanisms. Owing to the passivation effect induced by PCBM, the iodine ions/vacancies were significantly reduced. These findings indicate the importance of efficient charge transfer and reduction of defects/ion accumulation at interfaces for device stability.
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