Abstract
The hydrogenated amorphous silicon carbide (a-SiC:H) alloy is one of the more intensively studied as it has importance as an active layer in photovoltaic cells (as p-type window layer). In this present, a wide band gap and highly conductive p-type a-SiC:H thin films have been deposited by high-frequency plasma-enhanced chemical vapor deposition at low substrate temperature of 150 °C. This material as a window layer application for amorphous silicon solar cells has carry out. The a-SiC:H thin films were deposited at a plasma excitation frequency of 27.13 MHz by varying the dilution of CH 4 + H 2 mixture in the reaction chamber. The effects of deposited parameters on the characteristics of a-SiC:H have been investigated by UV–VIS spectroscopy, dark- and photoconductivity measurement, scanning electron microscopy and second ion mass spectroscopy, respectively. The results show the properties of a-SiC:H films as a function of carbon content. It was found that a-SiC:H film deposited at CH 4 flow rate of 40 sccm and H 2 flow rate of 50 sccm is better suited for thin film solar cell application and the solar cell with conversion efficiency of 10.11% was obtained.
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