Abstract
This research paper proposes the usage of a simple thermal treatment method to synthesis the pure and Eu3+ doped ZnO/Zn2SiO4 based composites which undergo calcination process at different temperatures. The effect of calcination temperatures on the structural, morphological, and optical properties of ZnO/Zn2SiO4 based composites have been studied. The XRD analysis shows the existence of two major phases which are ZnO and Zn2SiO4 crystals and supported by the finding in the FT-IR. The FESEM micrograph further confirms the existence of both ZnO and Zn2SiO4 crystal phases, with progress in the calcination temperature around 700–800 °C which affects the existence of the necking-like shape particle. Absorption humps discovered through UV-Vis spectroscopy revealed that at the higher calcination temperature effects for higher absorption intensity while absorption bands can be seen at below 400 nm with dropping of absorption bands at 370–375 nm. Two types of band gap can be seen from the energy band gap analysis which occurs from ZnO crystal and Zn2SiO4 crystal progress. It is also discovered that for Eu3+ doped ZnO/Zn2SiO4 composites, the Zn2SiO4 crystal (5.11–4.71 eV) has a higher band gap compared to the ZnO crystal (3.271–4.07 eV). While, for the photoluminescence study, excited at 400 nm, the emission spectra of Eu3+ doped ZnO/Zn2SiO4 revealed higher emission intensity compared to pure ZnO/Zn2SiO4 with higher calcination temperature exhibit higher emission intensity at 615 nm with 700 °C being the optimum temperature. The emission spectra also show that the calcination temperature contributed to enhancing the emission intensity.
Highlights
For the past decades, there has been a lot of studies regarding the luminescence material for the optical-electronic industry [1]
This can be discovered from Field emission scanning electron microscopy (FESEM) images, where no Eu3+ structure can be seen in the images regardless of the concentration of Eu3+, which shows that Eu3+ has been incorporated into both crystals sites
The blue-green emission peak can be due to the transition of an electron from interstitial zinc to zinc vacancies or interstitial oxygen as well as the transition originated from a complex defect level of oxygen vacancies and interstitial zinc to the valence band
Summary
There has been a lot of studies regarding the luminescence material for the optical-electronic industry [1] Luminescent materials such as phosphors are the substances that emit light in the electromagnetic waves (EM) spectrum after the conversion of the absorbed energy from an energy source. Among many types of phosphors research, zinc silicate (Zn2 SiO4 ) doped transition metal ions, as well as rare-earth ions have been one of the most popular host materials [6,7,8]. These numerous interests in zinc silicate phosphor due to their interesting properties, having good thermal and chemical stability [9], excel in water resistance with better resistance to nuclear radiation [10]. Zinc silicate exhibits excellent luminescence properties when homogenously grows with an inorganic oxide crystal [11,12,13,14,15]
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
