Abstract
The dependence of sheet carrier concentration of a Si-implanted layer on lattice parameters of undoped liquid encapsulated Czochralski GaAs was investigated. Crystals were grown from near-stoichiometric melts with varying boron concentrations. Sheet carrier concentration increases with an increase in lattice parameters due to the reduced boron concentration. An anomalous reduction in the lattice parameter suggests that native defects such as BGa VAs are responsible for the increase in the occupancy of implanted Si atoms on As sites.
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