Abstract
Dry laser cleaning is envisaged by semiconductor companies to replace wet-cleans. The influence of beam incidence angle was studied in the case of the removal of weakly absorbing particles on absorbing Si wafers by 248 nm DUV light pulses. By decreasing the beam incidence angle from 80° to 10°, the removal efficiency of 0.15–0.30 μm Si 3N 4 particles was increased by 30–45%, while no improvement was observed with 0.3 μm SiO 2 particles. Based on theoretical calculations, it is proposed that the enhanced removal of particles at grazing incidence is caused by the horizontal component of the beam radiation pressure. The difference between Si 3N 4 and SiO 2 particles is attributed to the influence of particle shape on van der Waals adhesion forces.
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