Abstract
Ga-doped ZnO(GZO) transparent thin films were grown onto glass substrates by sol-gel based spin coating process. After each coating, the as-deposited film was thermally baked at different moderate temperatures ranging from 100°C to 250°C followed by calcinations at certain temperature lower than 400°C. Characterization were conducted on calcined samples using scanning electron microscope (SEM), X-ray diffraction (XRD), optical spectroscopy and Fourier transform infrared spectroscopy (FTIR). The influence of baking temperature on crucial properties including structural, morphological and optical properties of Ga-doped ZnO transparent thin films were extensively investigated. XRD patterns exhibited typical polycrystalline of hexagonal wurtzite structure of as-deposited thin films and baking temperature is considered as one of essential key parameters affecting the crucial properties of the prepared films.
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