Abstract
The effects of arsenic ion implantation on the formation of Ti-silicides from TiN/Ti bilayer contacts on silicon were investigated. The TiN/Ti layers were sputter deposited in a single run, 90 nm of Ti and 80 nm of TiN (by reactive sputtering) on (111) Si wafers. The TiN/Ti/c-Si structures were then implanted with As + ions at 400–500 keV, to the doses from 1 × 10 15to 1 sx 10 16ions/cm 2, with the projected ion range near the Ti/Si interface. After implantation the samples were thermally treated in a vacuum, from 2 to 20 min at 650 °C and 2–10 min at 900 °C. Characterization of samples included RBS, XRD, SEM and electrical measurements. We have observed initial ion beam mixing at the Ti/Si interface, depending on the As + ion range. Annealing at 650 °C induces the Ti-Si reaction, formation of silicides, which strongly depends on the implanted arsenic dose. At 900 °C and for low implanted doses the Ti-Si reaction is completed, consuming the whole Ti layer to form the C54 TiSi 2 phase, while at high doses the Ti-Si reaction is retarded, causing segregation of arsenic near the TiN/Ti interface. The top TiN layer remains stable during implantation and thermal processing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
