Abstract
It is necessary to achieve uniform, high-density and large-area nucleation to form a large-area diamond thin film. It was reported that the low-pressure bias-enhanced nucleation method with hydrogen plasma pretreatment was useful for increasing the nucleation density and expanding the nucleation area. To realize the high-density nucleation and reproducibility, the influence of applying bias voltage on diamond nucleation was examined while changing the experimental condition from treatment to successive treatment.
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