Abstract
We have investigated the influence of a pulsed electric field on the intracenter population inversion between phosphorus donor states in silicon. Terahertz-range electroluminescence resulted from the populated excited donor states. It grows linearly above the impurity breakdown field but saturates at excitation powers exceeding 100 W at 5 μs pulse length. An electric field applied to the optically pumped silicon laser reduces the efficiency of the 2p0→1s(T2) phosphorus transition already at voltages below the impurity breakdown. The appearance of a current through the laser sample results in a fast quenching of the laser emission that indicates a reduction in the inversed population between the laser states.
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