Abstract
This letter investigates the influence of ammonia on amorphous carbon resistance random access memory by sputtering the carbon target with argon and ammonia mixed gas. The device fabricated with ammonia (C (NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> )-RRAM) showed remarkable improvement in memory window and high resistance state as compared to the device deposited without ammonia. Material analysis confirmed the absorption signal of amine. Current fitting indicated the conduction mechanism changes from hopping conduction to Schottky conduction with the addition of ammonia. Finally, we propose a model to explain the influence of ammonia on the resistive switching behaviors of the amorphous carbon RRAM.
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