Abstract
Ion implantation of 3 × 10 17 C/cm 2 at 25 keV into Si has been applied to synthesize thin films of SiC. The starting material, 130 nm thick layers of Si on sapphire substrates, was held at 900°C during ion implantation. After annealing at 1300°C for 15 min the resulting SiC films consist of crystallites of ∼ 10–30 nm diameter. Dopant species, P and Al for n- and p-type doping, have been introduced by ion implantation either before and after synthesis of SiC. Optical and electrical measurements have been performed in order to characterize the films. As concluded from nearly identical absorption characteristics, the crystallization behaviour of both types of specimens is fairly the same, indicating that the presence of dopants does not influence the reordering of the crystal matrix. Also the electrical properties of the doped specimens do not depend on the sequence of preparation steps. The experimental results will be discussed in some detail by considering the structural properties of the polycrystalline SiC films.
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