Industrial Approach for Next Generation of Power Devices Based on 4H-SiC

Abstract

Silicon Carbide metal-oxide-semiconductor field effect transistor (4H-SiC MOSFET) can be considered as the next revolution in power electronics applications. However, a wide market introduction of 4H-SiC MOSFET requires a special focus on device reliability and simplicity of use to replace Silicon switches in existing applications. This paper describes STMicroelectronics (STM) approach to define methodology and design solutions able to guarantee the end-users and to drive their choice toward 4H-SiC MOSFET as an ideal power component.