Abstract
The etching characteristics of ZnO thin films were examined in an HBr/Ar gas mix using an inductively coupled plasma reactive ion etching system. The etch rate and etch profile were systematically investigated as a function of gas concentration. In addition, the effects of etch parameters such as coil rf power, dc-bias voltage, and gas pressure were studied. As the HBr concentration increased, the etch rate of the ZnO films gradually decreased while the etch profile was improved. Surface analyses including X-ray photoelectron spectroscopy and atomic force microscopy were employed to elucidate the etch mechanism of ZnO in an HBr/Ar chemistry.
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