Abstract
The application of inductively coupled magnetic films to memory organization is described. Experimental work resulted in bilateral flux transfer between magnetic film elements of equal size. The influence of the device and coupling loop parameters, as well as the rise time of the drive pulse, on the maximum number of identical elements for a generalized model is shown. The parts used experimentally to demonstrate bilateral flux transfer were chain-store elements electrolessly plated with 20 000 A of nickel-iron film. Continual flux transfer back and forth on a tight flat coupling loop was obtained. Structures required to effectively use inductively coupled magnetic films in memory organizations were investigated. Application of inductively coupled magnetic films implies the possibilities of large memories, nondestructive readout memories, or 3D-like organization for magnetic film device memories.
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