Abstract
Silane-nitrous oxide mixtures are widely used in some industries such as semiconductor manufacturing. Since the decomposition of silane is faster than that of N2O and involves the formation of H2, the H2-N2O system might be an important sub-system of the silane oxidation mechanism. The induction delay times of this system have been widely studied in the low pressure range. Aim of the present study is to investigate the high-pressure behaviour of H2-N2O-Ar. Induction delays behind reflected shock waves have been measured between 1300–1860 K, at the pressure of 910±50 kPa for mixtures with equivalence ratios of 0.5, 1, and 2. It has been shown that equivalence ratio variations have no effect on induction delays. The modeling of delays has been improved by including an excited OH* kinetic sub-mechanism. Finally, various techniques of detonation cell size prediction have been evaluated in comparison with available experimental data.
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