Abstract
Recent research has shown that negative-barrier metal insulator semiconductor (MIS) contacts can exhibit the same minority-carrier reflecting properties as diffused back-surface field regions. This letter describes the use of negative-barrier platinum-MIS contacts to form the first induced back-surface field solar cells on p-type silicon substrates.Pt-SiOx -pSi back contacts have been applied both to cells with diffused front junctions and to cells with minority-carrier injecting MIS front junctions. In both cases an enhancement in open-circuit voltage comparable to that obtained with diffused back-surface fields has been observed. The negative-barrier MIS contact has also been found to increase the infrared photocurrent.
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