Abstract
Temperature dependence of the effective band gap (BG) energy of strained In x Ga 1− x As/GaAs single-quantum well and multi-quantum well structures grown by solid source MBE at varied substrate temperature is investigated by photoluminescence spectroscopy between 10 K and room temperature. For low-temperature-grown heterostructure, the temperature-induced BG shrinkage exhibits a good correlation with that of unstrained material. However, no consensus is shown to occur for a relatively high-temperature-grown quantum wells (QWs). This discrepancy is interpreted in terms of indium segregation and reevaporation during epitaxy. The low-temperature range, where the well-known Varshni law fails to fit PL peak positions, is found to decrease with increasing QW width and is attributed to the interface-roughness-induced exciton localization. This study was propped by numerical solving of Schrödinger equation taking into account strain, indium segregation and desorption effects.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
