Abstract
Doping of CdTe and Cd 1 − x Zn x Te layers and heterostructures with indium donors during their growth by MBE is described. Characterization by SIMS, electrical measurements and photoluminescence is presented with emphasis on: activation efficiency for uniform and planar doping; degree of localization achieved for step-like doping profiles; doped single and multiple quantum wells. Compensation by acceptor impurities and by intrinsic defects occurs at low (≈ 10 16 cm -3) and at high (< 10 18 cm -3) In concentrations, respectively. Essentially 100% activation efficiency of the donors is achieved in the intermediate range.
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