Abstract
The diffusion of implanted In α-Ti has been studied in the 823–1073 K temperature range by using the Rutherford backscattering spectrometry (RBS) technique. The measurements show that the diffusion coefficients follow a linear Arrhenius plot: D( T) = (2.0 ± 1.3) × 10 −6exp[−(260 ± 40) kJ/mol/ RT]m 2 s −1. The diffusion parameters D 0 and Q are typical of a normal substitutional behavior. Comparison of the present and previous published results of impurity diffusion in α-Ti does not show evidence for mass or size effects in the diffusion mechanism.
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