Abstract
A PbTe dopant source has been used to grow n-type InSb using the molecular beam epitaxy growth technique. From Auger electron spectroscopy studies, no surface segregation of tellurium or lead is observed up to ∽ 10 19 cm −3 doping levels. The correlation between the PbTe flux used during growth and the electron density in the grown films is very good, suggesting that the incorporation of tellurium is near unity. Six-probe Hall measurements of carrier transport gave room temperature mobilities as high as 51,300 cm 2 V −1 s −1 at an electron density of 2.9×10 16 cm −3 (54,300 at an electron density of 1.9×10 16 cm −3 at 110 K) for a film of 4.0 μm thickness on an InP substrate.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
