Abstract
An indirect method is described for determining silicon in Si-doped gallium arsenide by electrothermal atomic absorption spectrometry using an amplification reaction. After sample decomposition, arsenic is removed by evaporation in the presence of hydrochloric acid, hydroxylammonium chloride and potassium bromide. Silicon is extracted into MIBK as silicomolybdic acid. The organic phase is injected into the graphite furnace and the molybdenum content is finally determined. The detection limit (6s) is 0.7 μg Si/g GaAs. The method has been applied to the analysis of some Si-doped samples. The RSD of the overall procedure is 5.9–14.8% in the range 1.4–2.7 μg/g.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
