Abstract
Phosphorus plays a key role in the fabrication of silicon-based electronic devices. The determination of phosphorus in silicon has been carried out by atomic absorption spectroscopy (AAS) using a bismuth phosphomolybdate complex. Bismuth and phosphorus are present in the stoichiometric ratio of 1:1 in the complex. The determination of bismuth has been carried out in the complex and correlated with phosphorus content. The silicon matrix does not cause interference in the method as most of it is volatilized as silicon tetrafluoride by treatment with a hydrofluoric acid and nitric acid mixture. In this paper conditions for the formation of the complex, its extraction with methyl isobutyl ketone, the determination of bismuth using a 223.06-nm resonance line, and its correlation with phosphorus have been described.
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