Abstract
A new fabrication scheme for index-coupled DFB lasers with surface grating is presented. By using this method epitaxial grating overgrowth and Bragg-grating formation on a non-planar surface are avoided. InGaAsP lasers operating at λ = 1.55 µm show a continuous wave (CW) threshold current of 24 mA at room temperature. For as-cleaved devices a sidemode suppression ratio (SMSR) of 40 dB and monomode operation over 10 mW single sided output power have been achieved.
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