Abstract
The possible ways of increase of photolumincscence quantum cficiency of layers of porous silicon are investigated. The influence of anodization parameters on the photoluminescent properties of porous silicon layers obtained on silicon substrates with various crystallographic orientation is investigated. The model explaining the influence of the substrate crystallographic orientation on the photoluminescent properties of the porous silicon layers formed under anodization is proposed. The substantial growth of the photoluminescence quantum efficiency of porous silicon is observed under addition of НСl to the electrolyte.
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