Abstract
In situ doping characteristics of N, Al, and B in step-controlled epitaxy of SiC have been investigated. Clear C/Si ratio dependence was observed in the growth on (0001)Si faces. Doping efficiency of N decreased and those of Al and B increased under the C-rich condition, which agrees with a model proposed as ‘‘site-competition epitaxy.’’ However, doping efficiencies were almost independent of the C/Si ratio on (0001̄)C faces. Based on the results, the incorporation mechanism is discussed.
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