Abstract
A one-dimensional mathematical analysis is made of the redistribution of solute which occurs during crystal growth from a convected melt. In this analysis, the important contribution from lateral melt convection to one-dimensional solute redistribution analysis is taken into consideration via an annihilation/creation term in the one-dimensional solute transport equation. Calculations of solute redistribution under steady-state conditions have been carried out analytically. It is found that this new solute redistribution model overcomes several weaknesses that occur when applying the Burton, Prim and Slichter solute segregation equation (1953) in real melt growth situations. It is also found that, with this correction, the diffusion coefficients for solute's in liquid silicon are now found to be in the same range as other liquid metal diffusion coefficients.
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