Abstract
Electrochemical deposition of Cu and Co in monolayer amounts on hydrogen terminated Si(1 1 1) was studied ex situ and in situ by X-ray techniques. The X-ray beam was found to have a strong effect on the deposit causing desorption under the beam. Cu deposition on GaAs(0 0 1) from UHV is compared with electrodeposited Cu on the same surface, elucidating similarities and differences of electrochemical and UHV deposition. Roughening due to corrosion of Cu 3Au(1 1 1) is observed by crystal truncation scattering. The observed behaviour of passivation of this surface is explained by the formation of Au clusters, increasingly covering the surface at higher oxidation potential.
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