Abstract
A method is presented to investigate in-situ the relaxation behaviour of strained Si1-xGex layers on silicon substrates using a conventional X-ray powder diffractometer with a high-temperature attachment. It allows by a stair-like ramping of temperature a fast determination of the critical temperature at which relaxation starts. The method was used to investigate the temperature and time dependence of relaxation of SiGe layers grown by chemical vapour deposition. It was found that the relaxation mechanism changes drastically at temperatures above 950 °C.
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