In-situ X-ray diffraction analysis of GaN growth on graphene-covered amorphous substrates

Abstract

In-situ X-ray diffraction was used to investigate the initial stages of GaN growth on graphene-covered SiO2 substrates with or without AlN buffer layers by plasma-assisted molecular beam epitaxy. The in-plane lattice parameter of GaN remained almost constant during growth without AlN buffer layers, confirming weak interactions between GaN and graphene. On the substrate with AlN buffer layers, the GaN lattice parameter continuously changed from an AlN value to GaN value, indicating that the AlN islands act as seeds for GaN growth. Besides, GaN has preferential orientations epitaxial to graphene. Graphene can be used as a template of GaN growth on amorphous substrates.