Abstract
Abstract Vapor from liquid ethylene dibromide (EDB) is presented as an alternative to anhydrous HCl for in situ gas phase etching of InP substrates in Metalorganic Vapor Phase Epitaxy (MOVPE). The etch rate and surface morphology behaviors have been determined for conditions useful as a substrate cleaning step prior to growth of InP and InGaAs epilayers. The thermally activated decomposition and etching are analogous to III–V semiconductor growth processes; and the behavior in different carrier gas mixtures demonstrates dependence on gas phase reactions in the heated vapor above the substrate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
