Abstract
Pd was deposited onto Si (111) 7×7 surface at approximately 700 K inside an ultrahigh vacuum transmission electron microscope. Plan-viewed transmission electron microscopy (TEM) observation indicated that the islands have two kinds of shapes, round and rectangular (one-dimensional) ones. In a diffraction pattern for the rectangular islands, extra spots along the 〈110〉 direction of the Si surface, spacing of which is 1/8 times as long as that of Si (220) spots, were seen. A high resolution TEM image showed the corresponding superstructure in the rectangular islands. In situ observation of the growing process of the rectangular islands showed repeat of introduction and relief of strains during the growth, suggesting that such superstructure would be constructed by stacking compositionally different phases or introducing defects so that the periodically maximized strain is relieved.
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