Abstract
ABSTRACTThis paper focuses on in-situ transmission electron microscopy observations of surface roughening and defect formation in heteroepitaxial Sil−xGex thin films. Annealing experiments have been carried out in-situ in the microscope under a high vacuum environment. We comment on the sample preparation procedure for in-situ TEM experiments and explain the importance of having a sufficiently thick sample to have the stress state in the film unaltered. Experimental results of in-situ surface roughening are presented for suberitically and supercritically thick Sil−xGex films. We found that, in a vacuum environment, the kinetics of surface roughening and the resulting surface morphology are much different than in a hydrogen environment.
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