Abstract
We studied in situ the initial stages of atomic layer deposition (ALD) of HfO 2 by an ultra high vacuum atomic force microscope working in frequency-modulation mode. The ALD cycles, made by using tetrakis-di-methyl-amido-Hf and water as precursors, were performed on the Si(001)/SiO 2 substrate maintained at 230 °C. After each ALD cycle we studied the influence of the HfO 2 growth on the surface height histogram, the root mean square roughness, the surface fractal dimension and the autocorrelation function. This detailed analysis of the surface topography allowed us to confirm the completion of the first HfO 2 layer after four ALD cycles.
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