Abstract
AbstractAlInN is being considered to replace AlGaN as barrier material in high‐electron mobility transistors (HEMT) mainly due to the possibility to downscale the barrier layer thickness at coexistent higher drain current density. However, the stability of surface conditions which can strongly influence the electrical properties of the device has to be assured. In situ deposition of a SiN passivation layer by metal‐organic vapour phase epitaxy (MOVPE) is therefore a promising candidate to improve the device structure. In this paper, heterostructures with thin AlInN barrier passivated by in situ deposition of SiN layers of different thicknesses are presented. As expected, deterioration of the sheet resistance (RSh) was observed for the reference sample without SiN passivation layer by continuously performed RSh mappings of the investigated wafer. This change is noticeably reduced for samples with in situ SiN passivation layer. A comparison of two wafers, stored either with or without air exposure, reveals oxidation as presumable reason for the deterioration. Further, results from RSh measurements on processed wafers indicate an enhanced RSh stability during process for SiN‐capped samples. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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