Abstract
Reflection high energy electron diffraction (RHEED) is applied to analyze the particular stages of island formation during the molecular beam epitaxy (MBE) of pseudomorphical CdSe/ZnSe on GaAs(001) using an elevated substrate temperature of T s = 400°C. Plan-view transmission electron microscopy (TEM) images verify the existence of islands. In-situ RHEED intensity and profile analysis reveal a two-dimensional (2D) mode at growth start. Islanding begins at a CdSe coverage of 1.8 ML. After exceeding a coverage of 2.5 ML, the process of islanding is accelerated dramatically. The experimental results are interpreted as a sequence of 2D growth, Stranski-Krastanow growth-mode and ripening according to an equilibrium model predicting the surface morphology of compressively strained heterosystems.
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