Abstract
CuInSe2 thin films were prepared by sequential evaporation of the constituent elements onto Mo-coated glass substrates and the layers were subsequently selenized in a closed graphite box at 400°C. The films were characterised by X-ray diffraction (XRD) and in situ, real-time Rutherford backscattering spectrometry (RBS) analysis to monitor the progress of the reaction as the elemental layers interdiffused. For the Cu/In/Se structure, XRD performed after various anneals revealed that the Cu–In layer mixed with the Se layer to form a number of binary phases. For Cu/Se/In it was found that the Cu and Se had intermixed at room temperature. In both the structures investigated the Cu–Se and In–Se binary phases formed below 200°C and upon annealing above this temperature interdiffused to form chalcopyrite CuInSe2.
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