Abstract
We report the formation pathway of ScVO(4) zircon from ScVO(3) bixbyite with emphasis on the synthesis and stability of the novel intermediate defect zircon phase ScVO(4-x) (0.0 < x <or= 0.1). The formation pathway has been investigated by means of thermogravimetric/differential thermal analysis and in situ powder X-ray diffraction. The oxidation of ScVO(3) to ScVO(4) involves two intermediates of composition ScVO(3.5+y) (0.00 <or= y <or= 0.22) and the novel phase ScVO(4-x). ScVO(4-x) crystallizes in the defect zircon structure in space group I4(1)/amd (141) with a = 6.77761(5) A and c = 6.14045(8) A. Oxygen defect concentrations in bulk ScVO(4-x) samples range from 0.0 < x <or= 0.1. ScVO(4-x) is compared with the fully oxidized zircon structure ScVO(4) using powder X-ray diffraction, neutron diffraction, and bulk magnetic susceptibility data as well as (45)Sc and (51)V solid state NMR spectroscopy. ScVO(4-x) can only be obtained by oxidation of ScVO(3) or ScVO(3.5+y) while the reduction of ScVO(4) does not yield the novel defect structure. Mechanistic insights into the oxidative formation of ScVO(4) via the defect structure are presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
