Abstract
Major advances in semiconductor surface and interface characterisation are underway, with the introduction of new “epioptic” techniques which offer in situ characterisation and monitoring of semiconductor growth with submonolayer sensitivity. Conventional surface probes can only be applied in high vacuum environments like those of molecular beam epitaxy. Photons can be used in any growth environment, from atmospheric pressure to high vacuum, and offer the prospect of less damage, no charging, and greater penetration. Results are presented from the four main experimental techniques which have been used so far: reflectance anisotropy, spectroscopic ellipsometry, optical second harmonic generation, and Raman scattering. Prospects are excellent for the development of a variety of epioptic probes as monitoring and characterisation facilities for semiconductor growth, particularly in the area of sub-micron and nanoscale semiconductor devices and novel multilayer materials.
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