Abstract
To clarify the mechanism of the hydrogen (H)-surfactant effect, we have performed in situ monitoring of the H-surfactant-mediated growth of Ge on Si(0 0 1), using coaxial impact-collision ion scattering spectroscopy (CAICISS) and time-of-flight elastic recoil detection analysis (TOF-ERDA). It has been revealed that: (1) at a growth temperature of 350°C, the Ge overlayer of the best quality could be achieved with an optimal flux density of H, and (2) above 350°C, most of the adsorbed H atoms desorb from the growth front. The latter result indicates that the residence time of H atom on the growth front is an important factor for the surfactant effect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
