Abstract
An ion gated transistor is shown to have an analog electronic channel resistance that is dependent on the ion concentration in a solid state device. The ionic transistor made from a common battery cathode material, LiCoO2, is investigated for use in devices that exploit the interaction between ions and electrons with applications in low-power neuromorphic computing and non-volatile memory. The majority of the resistance change in LiCoO2 occurs close to the stoichiometric point, and thus, nanoscale LiCoO2-based ionic electronic devices are expected to consume minimal power and avoid structural phase changes leading to improved reliability.
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