Abstract
We have studied an in situ passivation of In0.53Ga0.47As, based on H2S exposure (50–350°C) following metal organic vapor phase epitaxy growth, prior to atomic layer deposition of HfO2 using Hf[N(CH3)2]4 and H2O precursors. X-ray photoelectron spectroscopy revealed the suppression of As oxide formation in air exposed InGaAs surfaces for all H2S exposure temperatures. Transmission electron microscopy analysis demonstrates a reduction of the interface oxide between the In0.53Ga0.47As epitaxial layer and the amorphous HfO2 resulting from the in situ H2S passivation. The capacitance-voltage and current-voltage behavior of Pd∕HfO2∕In0.53Ga0.47As∕InP structures demonstrates that the electrical characteristics of samples exposed to 50°C H2S at the end of the metal-organic vapor-phase epitaxy In0.53Ga0.47As growth are comparable to those obtained using an ex situ aqueous (NH4)2S passivation.
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