Abstract
Amorphous silicon-rich silicon carbide (a-SixC1-x) thin films that contain Si quantum dots (QDs) were prepared using radio-frequency plasma-assisted chemical vapor deposition (RF-PECVD) from reactive silane and methane precursor gases at a substrate temperature of 300 °C. The effect of the silane-to-methane flow ratio on the structural properties of the Si QDs/a-SixC1-x nanocomposite films, is systematically studied by means of high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The obtained results confirm the in-situ formation of Si QDs within the amorphous SiC matrix. Moreover, it is found that the Si crystalline fraction increases from 60.7 to 78.5% with increasing the gas flow ratio. Photoluminescence analyses reveal broader emission spectra which are explained in terms of quantum confinement-related emission corresponding to different QD sizes. Based on the obtained results, the growth mechanisms of Si QDs during the deposition of the a-SixC1-x film and the amorphous-to-crystalline transition are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
