Abstract
In-situ etching with CBr4 has been used to form buried Bragg gratings in AlGaAs-based broad area diode lasers with distributed feedback (DFB-BA) by pattern transfer into In0.49Ga0.51P within the MOVPE reactor. STEM/EDXS measurements show that the Bragg grating is finally formed by 10nm thick In0.49Ga0.51P stripes that are fully embedded in AlxGa1−xAs. The oxygen sheet concentration at the regrowth interface is found by SIMS to be below 1×1016cm−2. DFB-BA lasers fabricated using in-situ etching of the grating reach optical output power >12W and peak wall-plug efficiencies >60%.
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