Abstract
We used an in situ ellipsometer to measure the temperature-dependent growth curves, which are Δ versus ψ curves measured in real time, of the Au thin-films deposited under identical conditions, with the exception of the substrate temperature, for 240 s on thermally oxidized Si wafers by magnetron sputtering. The growth curves measured at substrate temperatures of 50, 100, 150, and 200°C, respectively, exhibited distinctive temperature-dependent trajectories; as we raised the substrate temperature, the radius of curvature increased. We were able to analyze the temperature dependent variation of ellipsometric constants by introducing a growth model such that the void fraction decreased as a function of thickness, and also using the results of spectroscopic ellipsometry analysis. We found that the remnant void fraction, the void fraction decrease rate, and the depolarization factor are the major parameters that govern the observed temperature dependence of growth curves.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
