Abstract
This paper reports the metalorganic vapor phase epitaxial growth of pseudomorphic InAs/InP single quantum wells (SQWs) on (001) InP substrates using in-situ surface photo-absorption (SPA) monitoring, and reports on the optical characterization of them. By adjusting the arsine flow rate, arsine exposure time and substrate temperature on the basis of in-situ SPA monitoring, we are able to grow pseudomorphic InAs/InP SQWs comprising up to 10-monolayer InAs wells having metallurgically abrupt and atomically flat strained heterointerfaces. Photoluminescence excitation measurement for an 8-monolayer InAs well shows energy splitting as large as 0.4 eV between heavy and light holes subbands, indicating the InAs well layer is coherently strained to a maximum extent within the critical layer thickness.
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