Abstract
Abstract A number of InP epilayers were grown by the hydride VPE technique and characterized by chemical etching, C-V , Hall effect and PL measurements. The main results are that: (i) the growth rate and surface morphology depend on the partial pressures of gaseous components; (ii) all layers were p-type with an acceptor concentration increasing with the growth rate; (iii) the purest layers were obtained when no surface features (hillocks) were present. From PL measurements we have deduced that the main residual donor is silicon and the main acceptors are zinc and possibly magnesium.
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