Abstract
The authors have studied the electrical conductivity of n+-n--n+ GaAs structures in which the thickness of the n- layer is comparable with the mean donor separation. At low temperatures, electrical conduction is dominated by a process in which electrons tunnel across the sample via shallow donor impurities close to the centre of the n- layer. By studying the magnetoresistance of such samples they have investigated the effect of a magnetic field on the donor wavefunction in GaAs. Measurements are compared with the approximate analytical expression for the donor wavefunction and with numerical solutions of the ground-state hydrogenic wavefunctions in megatesla fields developed by astrophysicists.
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