Impurities Behaviors in Indium Iodide Materials

Abstract

Environmentally friendly 99.998%-pure indium iodide (InI), one candidate materials for the room-temperature operating radiation detector, was purified more than 250 times using the zone-refining method to reduce the impurities. Segregation coefficient of major positive and negative impurities of the purified InI ingot was analyzed using time-of-flight secondary ion mass spectroscopy. Electrical and spectroscopic properties of the purified Pd/InI/Pd detector were also determined. Planar Pd/InI/Pd detector showed the 59.5-keV gamma peak of Am-241 clearly. However, low-energy gamma peaks were buried in the noise. Mechanical or electrical degradation under an ambient condition was not observed for six months. Electrical resistivity and electron mobility-lifetime product of the multiple-refined InI were $4\times 10^{11}\,\,\Omega \cdot \textrm {cm}$ and $1.3\times 10^{-3}\,\,\textrm {cm}^{2}/\textrm {V}$ , respectively.